收藏本站
November 2013
FCB36N60N
N-Channel SupreMOS ? MOSFET
600 V, 36 A, 90 m Ω
Features
? R DS(on) = 81 m Ω (Typ.) @ V GS = 10 V, I D = 18 A
? Ultra Low Gate Charge (Typ. Qg = 86 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 361 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
? Solar Inverter
? AC-DC Power Supply
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCB36N60N
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
36
22.7
V
A
I DM
Drain Current
- Pulsed
(Note 1)
108
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1800
12
3.12
100
20
312
2.6
mJ
A
mJ
V/ns
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FCB36N60N
Unit
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction to Case , Max.
Thermal Resistance, Junction to Ambient (1 in 2 Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
0.4
40
62.5
o
C/W
?2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C1
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FCD4N60TM_WS MOSFET N-CH 600V 3.9A DPAK
FCD5N60TF MOSFET N-CH 600V 4.6A DPAK
FCD7N60TF MOSFET N-CH 600V 7A DPAK
FCD9N60NTM MOSFET N-CH 600V 9A DPAK
FCH20N60 MOSFET N-CH 600V 20A TO-247
FCH22N60N MOSFET N-CH 600V 22A TO-247
FCH25N60N MOSFET N-CH 600V 25A TO-247
FCH35N60 MOSFET N-CH 600V 35A TO-247
相关代理商/技术参数
FCB-405 制造商:未知厂家 制造商全称:未知厂家 功能描述:Tyco Electronics Mid-Range Military/Aerospace Relays 5 AMPERES, DPDT
FCB-405-0508M 功能描述:通用继电器 RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
FCB-405-0517M 功能描述:通用继电器 Relays RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
FCB-405-0518M 功能描述:通用继电器 M83536/5-018M RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
FCB-405-0519L 制造商:TE Connectivity 功能描述: 制造商:Struthers-Dunn 功能描述:
FCB-405-0520M 功能描述:通用继电器 M83536/5-020M RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
FCB-405-0521M 功能描述:通用继电器 4FormC 4PDT 28VDC RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
FCB-405-0522M 功能描述:通用继电器 M83536/5-022M RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料: